G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems

被引：15

作者：

Aghababa, Hossein ^{[1
]}

Ebrahimi, Behzad ^{[1
]}

Saremi, Mehdi ^{[1
]}

Moalemi, Vahid ^{[1
]}

Forouzandeh, Behjat ^{[1
]}

机构：

[1] Univ Tehran, Sch ECE, Tehran 14399, Iran

来源：

IEICE ELECTRONICS EXPRESS | 2012年 / 9卷 / 10期

关键词：

G4-FET; adaptive neuro-fuzzy training systems; semiconductor industry; circuit simulation; HSPICE model;

D O I：

10.1587/elex.9.881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

G4-FET has attracted attention as an emerging device for the future generations of semiconductor industry. This paper is intended to propose a model representing the characteristics of G4-FET device in order to perform circuit simulations. The modeling approach is established upon the neuro-fuzzy technique whose main strength is that they are universal approximators with the ability to solicit interpretable IF-THEN rules. The accuracy of the proposed model is verified by HSPICE circuit simulations.

引用

页码：881 / 887

页数：7

共 10 条

[1] Depletion-all-around operation of the SOI four-gate transistor [J].