Conduction-Electron Spin Resonance in HgSe Crystals

被引：0

作者：

Veinger, A. I. ^{[1
]}

Kochman, I. V. ^{[1
]}

Okulov, V. I. ^{[2
]}

Andriichuk, M. D. ^{[3
]}

Paranchich, L. D. ^{[3
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Ural Branch, Mikheev Inst Met Phys, Ekaterinburg 620137, Russia

[3] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 13期

基金：

俄罗斯基础研究基金会;

关键词：

MERCURY SELENIDE; DE-HAAS; ABSORPTION; IMPURITIES; SHUBNIKOV; METALS;

D O I：

10.1134/S1063782618130225

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. It is found that the conduction of HgSe is not only nonparabolic, but also nonspherical.

引用

页码：1672 / 1676

页数：5

共 17 条

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