Giant and reversible electronic structure evolution in a magnetic topological material EuCd2As2

被引：12

作者：

Wang, Yang ^{[1
,2
]}

Li, Cong ^{[1
,2
]}

Miao, Taimin ^{[1
,2
]}

Zhang, Shuai ^{[1
,2
]}

Li, Yong ^{[1
,2
]}

Zhou, Liqin ^{[1
,2
,4
]}

Yang, Meng ^{[1
,2
,3
]}

Yin, Chaohui ^{[1
,2
]}

Cai, Yongqing ^{[1
,2
]}

Song, Chunyao ^{[1
,2
]}

Luo, Hailan ^{[1
,2
]}

Chen, Hao ^{[1
]}

Mao, Hanqing ^{[1
,2
]}

Zhao, Lin ^{[1
,2
]}

Deng, Hanbin ^{[1
,2
]}

Sun, Yingkai ^{[1
,2
]}

Zhu, Changjiang ^{[1
,2
]}

Zhang, Fengfeng ^{[5
]}

Yang, Feng ^{[5
]}

Wang, Zhimin ^{[5
]}

Zhang, Shenjin ^{[5
]}

Peng, Qinjun ^{[5
]}

Pan, Shuheng ^{[1
,2
,4
,6
]}

Shi, Youguo ^{[1
,2
,3
]}

Weng, Hongming ^{[1
,2
,4
]}

Xiang, Tao ^{[1
,2
,4
,7
]}

Xu, Zuyan ^{[5
]}

Zhou, X. J. ^{[1
,2
,4
,7
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[4] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China

[5] Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China

[6] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China

[7] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China

来源：

PHYSICAL REVIEW B | 2022年 / 106卷 / 08期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

INSULATOR;

D O I：

10.1103/PhysRevB.106.085134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure evolution with doping in a magnetic topological material. By performing high-resolution angle-resolved photoemission measurements on EuCd2As2, we found that a huge amount of hole doping can be introduced into the sample surface due to surface absorption. The electronic structure exhibits a dramatic change with the hole doping which cannot be described by a rigid band shift. Prominent band splitting is observed at high doping which corresponds to a doping-induced magnetic transition at low temperature (below -15 K) from an antiferromagnetic state to a ferromagnetic state. These results have established a detailed electronic phase diagram of EuCd2As2 where the electronic structure and the magnetic structure change systematically and dramatically with the doping level. They further suggest that the transport, magnetic, and topological properties of EuCd2As2 can be greatly modified by doping. This work will stimulate further investigations to explore for new phenomena and properties in doping this magnetic topological material.

引用

页数：10

共 26 条

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