Molecular dynamics study on low-energy sputtering properties of MgO surfaces

被引:15
作者
Ahn, Hyo-Shin [1 ]
Kim, Tae-Eun [1 ]
Cho, Eunae [1 ]
Ji, Miran [1 ]
Lee, Choong-Ki [1 ]
Han, Seungwu [1 ]
Cho, Youngmi [2 ]
Kim, Changwook [2 ]
机构
[1] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[2] Samsung SDI Co Ltd, CAE Team, Yongin 446557, South Korea
关键词
D O I
10.1063/1.2899182
中图分类号
O59 [应用物理学];
学科分类号
摘要
In an effort to understand microscopic processes occurring between MgO protective layers and impinging plasma ions in a discharge cell of plasma-display panel, sputtering properties of MgO(100) surface by He, Ne, and Xe atoms are studied with molecular dynamics simulations. Interatomic potentials between constituent atoms are fitted to first-principles data sets for representative configurations. Various incident directions of ions are considered with kinetic energies under 100 eV. It is found that sputtering yields for the Ne atom are largest among tested noble gases. The angle dependence of sputtering yields indicates that (111)-oriented MgO films are much more vulnerable to ion attacks than (100)-oriented layers. A surface model including the monolayer step is also studied and it is found that the yields increase substantially for grazing-angle incidence. (c) 2008 American Institute of Physics.
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页数:9
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