Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide

被引：8

作者：

Goldman, E. I. ^{[1
]}

Levashova, A. I. ^{[1
]}

Levashov, S. A. ^{[1
]}

Chucheva, G. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Radio Engn & Elect, Fryazino Branch, Fryazino 141190, Moscow Oblast, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Tunneling Conduction; Capacitive Current; High Frequency Measurement; Field Electrode; Agilent E4980A;

D O I：

10.1134/S1063782615040120

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibilities of using the data of high-frequency measurements of the impedance of metal-oxide-semiconductor structures with an ultrathin insulating layer for determining the parameters of the semiconductor and the tunneling characteristics of the insulator are considered. If the accuracy of the experiment makes it possible to record both the active and reactive impedance components, the thickness of the surface depletion layer, the resistance of the semiconductor base portion, the differential tunnel conductivity of the insulating layer, and the differential tunneling-stimulated current of the generation of electron-hole pairs are calculated using the values of the capacitance and conduction of the structure measured at two frequencies. In the case, where the values of the active component of the impedance is beyond the accuracy of measurements, analysis of the parameters is possible upon four-frequency organization of the experiment from the values of only the capacitances with an increased accuracy of their measurements. A test for the necessary accuracy of data of such an experiment is formulated. If the test fails, it is possible to determine only the capacitance of the surface depletion layer in the semiconductor and, in this case, it is sufficient to implement only the single-frequency experiment.

引用

页码：472 / 478

页数：7

共 6 条

[1]

[Anonymous], 2007, PRECISION METER LCR, P32

[2]

Gol'dman EI, 1997, INSTRUM EXP TECH+, V40, P841

[3]

LONNUM JF, 1986, ELECTRON LETT, V22, P456, DOI 10.1049/el:19860310

[4]

Ng KK., 2021, Physics of Semiconductor Devices

[5] MOS capacitance measurements for high-leakage thin dielectrics [J].

Yang, KJ ;

Hu, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) :1500-1501

[6] A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures [J].

Zhdan, A. G. ;

Chucheva, G. V. ;

Goldman, E. I. .

SEMICONDUCTORS, 2006, 40 (02) :190-196

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