Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

被引：4

作者：

Takaya, Satoshi ^{[1
]}

Tanamoto, Tetsufumi ^{[1
]}

Noguchi, Hiroki ^{[1
]}

Ikegami, Kazutaka ^{[1
]}

Abe, Keiko ^{[1
]}

Fujita, Shinobu ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期

关键词：

D O I：

10.7567/JJAP.56.04CN07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65nm CMOS technology. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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