Determination of exciton diffusion lengths in isotopically engineered diamond junctions

被引：15

作者：

Barjon, J. ^{[1
]}

Jomard, F. ^{[1
]}

Tallaire, A. ^{[2
]}

Achard, J. ^{[2
]}

Silva, F. ^{[2
]}

机构：

[1] Univ Versailles, CNRS, GEMaC, F-78000 Versailles, France

[2] Univ Paris 13, CNRS, LSPM, F-93430 Villetaneuse, France

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期

关键词：

cathodoluminescence; diamond; diffusion; energy gap; excitons; semiconductor heterojunctions; NATURAL DIAMOND; CATHODOLUMINESCENCE; EXCITATION; TRANSPORT; GROWTH; GAAS;

D O I：

10.1063/1.3689783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A direct observation of exciton diffusion in isotopically engineered C-12/C-13 diamond junctions is presented. Excitons generated under a focused electron beam in the higher-energy bandgap C-13 diamond diffuse and part of them are collected in the lower-energy bandgap C-12 diamond, where they recombine. By using cathodoluminescence spectroscopy on samples in cross-section, the recombination intensity is followed as a function of the electron-beam distance to the C-12/C-13 interface. Exciton diffusion lengths in C-13 diamond up to 7.9 mu m at 10 K are deduced. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3689783]

引用

页数：4

共 18 条

[1] High quality MPACVD diamond single crystal growth: high microwave power density regime [J].

Achard, J. ;

Silva, F. ;

Tallaire, A. ;

Bonnin, X. ;

Lombardi, G. ;

Hassouni, K. ;

Gicquel, A. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6175-6188

[2] COMPARISON OF THE LATERAL CARRIER TRANSPORT BETWEEN A GAAS SINGLE-QUANTUM-WELL AND THE ALGAAS BARRIER DURING CATHODOLUMINESCENCE EXCITATION [J].

ARAUJO, D ;

OELGART, G ;

GANIERE, JD ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) :342-346

[3] Boron acceptor concentration in diamond from excitonic recombination intensities [J].

Barjon, J. ;

Tillocher, T. ;

Habka, N. ;

Brinza, O. ;

Achard, J. ;

Issaoui, R. ;

Silva, F. ;

Mer, C. ;

Bergonzo, P. .

PHYSICAL REVIEW B, 2011, 83 (07)

[4] Isotope effects on the optical spectra of semiconductors [J].

Cardona, M ;

Thewalt, MLW .

REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1173-1224

[5] INDIRECT ENERGY-GAP OF C-13 DIAMOND [J].

COLLINS, AT ;

LAWSON, SC ;

DAVIES, G ;

KANDA, H .

PHYSICAL REVIEW LETTERS, 1990, 65 (07) :891-894

[6] INTRINSIC AND EXTRINSIC RECOMBINATION RADIATION FROM NATURAL AND SYNTHETIC ALUMINUM-DOPED DIAMOND [J].

DEAN, PJ ;

LIGHTOWLERS, EC ;

WIGHT, DR .

PHYSICAL REVIEW, 1965, 140 (1A) :A352-+

[7] APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :537-539

[8] Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode [J].

Makino, Toshiharu ;

Yoshino, Kiyoshi ;

Sakai, Norihiro ;

Uchida, Kouji ;

Koizumi, Satoshi ;

Kato, Hiromitsu ;

Takeuchi, Daisuke ;

Ogura, Masahiko ;

Oyama, Kazuhiro ;

Matsumoto, Tsubasa ;

Okushi, Hideyo ;

Yamasaki, Satoshi .

APPLIED PHYSICS LETTERS, 2011, 99 (06)

[9] Probing carrier dynamics in nanostructures by picosecond cathodoluminescence [J].

Merano, M ;

Sonderegger, S ;

Crottini, A ;

Collin, S ;

Renucci, P ;

Pelucchi, E ;

Malko, A ;

Baier, MH ;

Kapon, E ;

Deveaud, B ;

Ganière, JD .

NATURE, 2005, 438 (7067) :479-482

[10] ELECTRON EFFECTIVE MASSES AND LATTICE SCATTERING IN NATURAL DIAMOND [J].

NAVA, F ;

CANALI, C ;

JACOBONI, C ;

REGGIANI, L ;

KOZLOV, SF .

SOLID STATE COMMUNICATIONS, 1980, 33 (04) :475-477

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