Comment on "Characterization of As-doped, p-type ZnO by x-ray absorption near-edge structure spectroscopy:: Theory" [Appl. Phys. Lett. 89, 222113 (2006)]

被引：90
作者：
Vaithianathan, Veeramuthu [1 ]
Kim, Sang Sub [1 ]
Asokan, Kandasami [2 ]
机构：
[1] Inha Univ, Sch Mat Sci, Inchon 402751, South Korea
[2] Interuniv Accelerator Ctr, New Delhi 110067, India
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 23期
关键词：
D O I：
10.1063/1.2939557
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
No abstract available
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页数：1
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