Existence of stationary solutions to an energy drift-diffusion model for semiconductor devices

被引：15

作者：

Fang, WF ^{[1
]}

Ito, K

机构：

[1] W Virginia Univ, Dept Math, Morgantown, WV 26506 USA

[2] N Carolina State Univ, Dept Math, Raleigh, NC 27695 USA

来源：

MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES | 2001年 / 11卷 / 05期

关键词：

D O I：

10.1142/S0218202501001124

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

We analyze a mathematical model for semiconductors derived from the hydrodynamic model under the massless assumption. This model augments the classical drift-diffusion model by including temperature as a dependent variable. We establish the existence of stationary solutions near the equilibrium state.

引用

页码：827 / 840

页数：14

共 16 条

[1] An energy-transport model for semiconductors derived from the Boltzmann equation [J].

BenAbdallah, N ;

Degond, P ;

Genieys, S .

JOURNAL OF STATISTICAL PHYSICS, 1996, 84 (1-2) :205-231

[2] MODELING AND ANALYSIS OF LASER-BEAM INDUCED CURRENT IMAGES IN SEMICONDUCTORS [J].

BUSENBERG, S ;

FANG, WF ;

ITO, K .

SIAM JOURNAL ON APPLIED MATHEMATICS, 1993, 53 (01) :187-204

[3]

Dolbeault J., 1991, Mathematical Models & Methods in Applied Sciences, V1, P183, DOI 10.1142/S0218202591000113

[4]

FANG W, 1999, ELECT J DIFFERENTIAL, V15, P1

[5] Global solutions of the time-dependent drift-diffusion semiconductor equations [J].

Fang, WF ;

Ito, K .

JOURNAL OF DIFFERENTIAL EQUATIONS, 1995, 123 (02) :523-566

[6] ON THE TIME-DEPENDENT DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS [J].

FANG, WF ;

ITOI, K .

JOURNAL OF DIFFERENTIAL EQUATIONS, 1995, 117 (02) :245-280

[7] ON THE BASIC EQUATIONS FOR CARRIER TRANSPORT IN SEMICONDUCTORS [J].

GAJEWSKI, H ;

GROGER, K .

JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS, 1986, 113 (01) :12-35

[8] CONSISTENCY OF SEMICONDUCTOR MODELING - AN EXISTENCE-STABILITY ANALYSIS FOR THE STATIONARY VANROOSBROECK SYSTEM [J].

JEROME, JW .

SIAM JOURNAL ON APPLIED MATHEMATICS, 1985, 45 (04) :565-590

[9]

JEROME JW, 1994, SEMICONDUCTORS+, V2, P185

[10] QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS [J].

JUNGEL, A .

MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 1995, 5 (04) :497-518

← 1 2 →