Submicron trackwidth and stripe height MR sensor test structures

被引:13
作者
Fontana, RE [1 ]
MacDonald, SA [1 ]
Tsang, C [1 ]
Lin, T [1 ]
机构
[1] IBM CORP,ALMADEN RES CTR,STORAGE SYST DIV,SAN JOSE,CA 95120
关键词
D O I
10.1109/20.538650
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Magnetic recording areal densities greater than 5 Gbit/in(2) will require magnetoresistive (MR) sensors with critical dimensions below 1.0 mu m. The longitudinal bias scheme used for this sensor size must provide stable device operation and must be compatible with fine dimension lithographic processing. A contiguous junction sensor structure with longitudinal material abutted to the sensor magnetic films and with lead material self aligned to the longitudinal bias material can satisfy these requirements. This is demonstrated by the fabrication and testing of submicron unshielded MR structures with stable transfer curves.
引用
收藏
页码:3440 / 3442
页数:3
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