Modeling of ultrafast recovery times and saturation intensities of the intersubband absorption in InGaAs/AlAs/AlAsSb coupled double quantum wells

被引:1
|
作者
Ma, Ping [1 ]
Fedoryshyn, Yuriy [1 ]
Jaeckel, Heinz [1 ]
机构
[1] Swiss Fed Inst Technol, Elect Lab, CH-8092 Zurich, Switzerland
来源
ACTIVE PHOTONIC MATERIALS IV | 2011年 / 8095卷
关键词
All-optical switching; quantum well; intersubband transition; nonlinear susceptibility; optical Bloch equation; density matrix theory; absorption saturation; relaxation time; TRANSITIONS; DYNAMICS; ENERGY;
D O I
10.1117/12.893601
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Ultrafast optical switches are one of the crucial components in next generation all-optical communication networks. One promising candidate is the optical switch based on saturable intersubband (ISB) absorption in doped InGaAs/AlAs/AlAsSb coupled double quantum wells (CDQW). We employ the density matrix theory and modified optical Bloch equations with the relaxation-time approximation to simulate the time evolution of optical nonlinearities in quantum well (QW) structures. The absorption saturation characteristics are derived afterwards. The theoretical estimates are used to interpret the corresponding experimental results. Furthermore, several impact factors related to dynamic and saturation characteristics of the materials are discussed theoretically. The studies provide useful clues to optimize the QW material and device design.
引用
收藏
页数:10
相关论文
共 28 条
  • [1] Bandgap Control for Intersubband Transition in InGaAs/AlAsSb Coupled Double Quantum Wells
    Feng, Jijun
    Akimoto, Ryoichi
    Gozu, Shin-ichiro
    Mozume, Teruo
    Hasama, Toshifumi
    Ishikawa, Hiroshi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (15) : 1474 - 1477
  • [2] Absorption dynamics in all-optical switch based on intersubband transition in InGaAs-AlAs-AlAsSb coupled quantum wells
    Simoyama, Takasi
    Sekiguchi, Sigeaki
    Yoshida, Haruhiko
    Kasai, Jun-ichi
    Mozume, Teruo
    Ishikawa, Hiroshi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (5-8) : 604 - 606
  • [3] Ultralow intersubband absorption saturation intensity at communication wavelength achieved in novel strain compensated InGaAs/AlAs/AlAsSb quantum wells grown by molecular beam epitaxy
    Mozume, T
    Kasai, J
    Georgiev, N
    Simoyama, T
    Gopal, AV
    Yoshida, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (9A): : 5500 - 5507
  • [4] Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wells
    Gopal, AV
    Yoshida, H
    Simoyama, T
    Georgiev, N
    Mozume, T
    Ishikawa, H
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (02) : 299 - 305
  • [5] 1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
    Akiyama, T
    Georgiev, N
    Mozume, T
    Yoshida, H
    Gopal, AV
    Wada, O
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (04) : 495 - 497
  • [6] Absorption saturation of near-infrared intersubband transition in lattice-matched InGaAs/AlAsSb quantum wells
    Neogi, A
    Yoshida, H
    Mozume, T
    Georgiev, N
    Akiyama, T
    Wada, O
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (1-2) : 183 - 186
  • [7] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs center barrier
    Gozu, Shin-ichiro
    Mozume, Teruo
    Ishikawa, Hiroshi
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1700 - 1702
  • [8] Absorption saturation of intersubband transition in InGaAs/AlAsSb quantum well characterized by absorption spectral analysis
    Gopal, AV
    Yoshida, H
    Neogi, A
    Mozume, T
    Georgiev, N
    Wada, O
    Ishikawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (10A): : L1015 - L1018
  • [9] Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier layer composition
    Nagase, Masanori
    Mozume, Teruo
    Simoyama, Takasi
    Hasama, Toshifumi
    Ishikawa, Hiroshi
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 240 - 243
  • [10] Modeling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ=1.55 μm) Based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-Matched to InP
    Matin, Pouyan
    Wu, Jiang
    Liu, Huiyun
    Seddon, James
    Seeds, Alwyn
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2021, 57 (04)