Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq3)/ZnSe organic-inorganic bistable device

被引:12
作者
Onlaor, K. [1 ,2 ]
Tunhoo, B. [1 ,2 ]
Thiwawong, T. [1 ,2 ]
Nukeaw, J. [1 ,2 ]
机构
[1] King Mongkuts Inst Technol Ladkrabang, Coll Nanotechnol, Elect & Control Syst Nanodevice Res Lab, Bangkok 10520, Thailand
[2] Minist Educ, CHE, Thailand Ctr Excellence Phys, Bangkok 10400, Thailand
关键词
Organic-inorganic nanodevice; Memory device; Conduction mechanism; Bistable device; Memory characteristics; MEMORY CELLS; THIN-FILM; ALQ(3); HETEROSTRUCTURE; NANOPARTICLES; RESISTANCE; ELECTRODE; EMISSION; ENERGY;
D O I
10.1016/j.cap.2011.07.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present that the electrical bistability in organic-inorganic bistable devices based on tris-(8-hydroxyquinoline) aluminum (Alq(3)) and zinc selenide (ZnSe) with the tri-layer structure of Alq(3)/aluminum (Al)/ZnSe. The current-voltage characteristics of the bistable device exhibit two electrical states as low (OFF state) and high (ON state) conductivity with ON/OFF ratio about four orders of magnitude. The conduction mechanisms in both ON and OFF states were analyzed by theoretical model. In the OFF state, the conduction mechanisms can be explained by thermionic emission model, which the ON state can be described by ohmic conduction model. The retention times of both states are more than 8000 s, and the device can reproduce continuous write-read-erase-read switching cycles. Moreover, for the organic-inorganic bistable device was kept at one year in ambient condition without encapsulation. The device still exhibited the electrical bistable behavior. Consequently, the ZnSe layer may be led to improve the lifetime property of the bistable device which acted as a self-encapsulating layer. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码:331 / 336
页数:6
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