Phase transitions and Raman scattering spectra of TlGaSe2

被引:6
作者
Paucar, R. [1 ]
Itsuwa, H. [1 ]
Wakita, K. [1 ]
Shim, Y. [2 ]
Alekperov, O. [3 ]
Mamedov, N. [3 ]
机构
[1] Chiba Inst Technol, Narashino, Chiba, Japan
[2] Osaka Prefecture Univ, Naka Ku, Sakai, Osaka 591, Japan
[3] Azerbaijan Natl Acad Sci, Inst Phys, AZ-1143 Baku, Azerbaijan
来源
6TH INTERNATIONAL CONFERENCE ON OPTICAL, OPTOELECTRONIC AND PHOTONIC MATERIALS AND APPLICATIONS (ICOOPMA) 2014 | 2015年 / 619卷
关键词
D O I
10.1088/1742-6596/619/1/012018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we examined the phase transitions in the ternary thallium chalcogenide TlGaSe2 by studying the temperature dependence of the Raman spectra with the aid of confocal microscopy. The unpolarized Raman scattering spectra of TlGaSe2 single crystals were measured over the temperature range 78 300 K (which includes the range of the successive phase transitions) in the frequency region of 50 300 cm(-1). The Raman spectra exhibited 12 lines at 300 K, but the number of lines rose to 17 at 78 K. In the temperature interval between 107 K and 120 K, where the phase transitions take place, the temperature dependence of the phonon frequencies showed discontinuities for several of the Raman lines.
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页数:4
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