Optimisation design for EEPROM embedded in UHF-RFID passive transponders

被引:0
作者
Li, Ming [1 ,2 ]
Yang, Li-Wu [2 ]
Kang, Jin-Feng [1 ]
Wang, Yang-Yuan [1 ]
机构
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Semicond Mfg Int Corp, Shanghai, Peoples R China
关键词
charge pump; clock doubler; discharge scheme; EEPROM; sense amplifier; voltage doubler; CHARGE PUMP; POWER; CIRCUIT; MEMORIES; CHIP; TAG;
D O I
10.1080/00207217.2010.497678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Low cost and low power are the major requirements for radio-frequency identification (RFID) applications. In this article, optimisation techniques on ultra-high frequency (UHF) RFID passive transponders are proposed to achieve low power without loss of area. The optimisations cover the key sub-circuits, such as the charge pump, discharge scheme and sense amplifier in the embedded electrically erasable programmable read-only memory (EEPROM) of UHF RFID-passive transponders. A 256-byte EEPROM for UHF RFID application with an 0.8 mm x 0.7 mm chip area was designed and manufactured based on an SMIC 0.18 mu m EEPROM process. The simulations and measurements show that, compared to the conventional design, a reduced power loss of more than 20% is achieved without a loss in the chip area.
引用
收藏
页码:569 / 582
页数:14
相关论文
共 19 条
  • [1] [Anonymous], 2005, EPC RAD FREQ ID PROT
  • [2] An EEPROM programming controller for passive UHF RFID transponders with gated clock regulation loop and current surge control
    Barnett, Raymond E.
    Liu, Jin
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (08) : 1808 - 1815
  • [3] A high-performance very low-voltage current sense amplifier for nonvolatile memories
    Conte, A
    Lo Giudice, G
    Palumbo, G
    Signorello, A
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (02) : 507 - 514
  • [4] Design techniques for EEPROMs embedded in portable systems on chips
    Daga, JM
    Papaix, C
    Merandat, M
    Ricard, S
    Medulla, G
    Guichaoua, J
    Auvergne, D
    [J]. IEEE DESIGN & TEST OF COMPUTERS, 2003, 20 (01): : 68 - 75
  • [5] ON-CHIP HIGH-VOLTAGE GENERATION IN MNOS INTEGRATED-CIRCUITS USING AN IMPROVED VOLTAGE MULTIPLIER TECHNIQUE
    DICKSON, JF
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (03) : 374 - 378
  • [6] Dong-Sheng L., 2006, CIRCUITS DEVICES MAG, V22, P53
  • [7] A high-efficiency CMOS voltage doubler
    Favrat, P
    Deval, P
    Declercq, MJ
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (03) : 410 - 416
  • [8] Fully integrated passive UHF RFID transponder IC with 16.7-μW minimum RF input power
    Karthaus, U
    Fischer, M
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (10) : 1602 - 1608
  • [9] Design of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processes
    Ker, MD
    Chen, SL
    Tsai, CS
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (05) : 1100 - 1107
  • [10] Low-power 512-bit EEPROM designed for UHF RFID tag chip
    Lee, Jae-Hyung
    Kim, Ji-Hong
    Lim, Gyu-Ho
    Kim, Tae-Hoon
    Lee, Jung-Hwan
    Park, Kyung-Hwan
    Park, Mu-Hun
    Ha, Pan-Bong
    Kim, Young-Hee
    [J]. ETRI JOURNAL, 2008, 30 (03) : 347 - 354