Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination

被引：59

作者：

He, Qiming ^{[1
,2
]}

Hao, Weibing ^{[2
]}

Zhou, Xuanze ^{[2
]}

Li, Yu ^{[3
]}

Zhou, Kai ^{[2
]}

Chen, Chen ^{[2
]}

Xiong, Wenhao ^{[2
]}

Jian, Guangzhong ^{[2
]}

Xu, Guangwei ^{[2
]}

Zhao, Xiaolong ^{[2
]}

Wu, Xiaojun ^{[1
]}

Zhu, Junfa ^{[3
]}

Long, Shibing ^{[2
]}

机构：

[1] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China

[2] USTC, Sch Microelect, Hefei 230026, Peoples R China

[3] USTC, NRSL, Hefei 230029, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 02期

关键词：

beta-gallium oxide; Schottky barrier diode; air exposure; surface treatment; BALIGAS FIGURE; ABSORPTION; MERIT;

D O I：

10.1109/LED.2021.3133866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates vertical beta-Ga2O3 Schottky barrier diodes (SBDs) breaking through the power figure of merit of 1 GW/cm(2) without edge termination. The unreliable surfaceon the top of similar to 1.2x10(16) cm(-3) drift region, which naturally formed in air, was removed by inductively coupled plasma etching. The repaired surface was exposed to ambient air for less than 10 minutes during the entire preparation process. Compared with the excessive air exposure samples, the leakage current was well suppressed for the Ni/beta-Ga2O3 SBDs fabricated on a clean surface. Moreover, the blocking voltage reaches a maximum value of 1720 V, and the forward/reverse characteristics of the diodes on the same wafer show good uniformity. These results pave the way for further improving the performance of beta-Ga2O3 devices and verify the potential of beta-Ga2O3 SBDs for power applications.

引用

页码：264 / 267

页数：4

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