Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

被引：8

作者：

Chowdhury, Debasree ^{[1
]}

Ghose, Debabrata ^{[1
]}

机构：

[1] Saha Inst Nucl Phys, Sect 1, Block AF, Kolkata 700064, W Bengal, India

来源：

APPLIED SURFACE SCIENCE | 2016年 / 385卷

关键词：

GaAs; Ar+ sputtering; Reverse epitaxy; Nanoripples; Ehrlich-Schwoebel barrier; NANOSTRUCTURES;

D O I：

10.1016/j.apsusc.2016.05.099

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degrees C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：410 / 416

页数：7

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