SnO2: CuSb2O6 Thin Films Prepared by Pulsed Laser Deposition

被引：3

作者：

Lee, Chae Jong ^{[1
]}

Lee, Joon-Hyung ^{[2
]}

Kim, Jeong-Joo ^{[2
]}

Lee, Jai-Yeoul ^{[1
]}

Lee, Hee Young ^{[1
]}

机构：

[1] Yeungnam Univ, Sch Mat Sci & Engn, Kyongsan 712749, South Korea

[2] Kyungpook Natl Univ, Sch Mat Sci & Engn, Taegu 702701, South Korea

来源：

INTEGRATED FERROELECTRICS | 2010年 / 115卷

关键词：

SnO2; co-doping; pulsed laser deposition; transparent conductive oxide; thin film; DOPED TIN OXIDE; ELECTRICAL-PROPERTIES; ELECTROCHROMISM;

D O I：

10.1080/10584587.2010.503507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SnO2 thin films doped with CuSb2O6 were prepared by pulsed laser deposition method, in an attempt to evaluate the effect of Cu and Sb co-doping on optical and electrical properties. Alkaline-free borosilicate glass substrates were used as substratewhere the substrate temperature was maintained in the range of 575 similar to 650 degrees C during deposition with oxygen pressure of 3 similar to 5 mTorr and laser energy density of 1 Jcm(-2). The minimum electrical resistivity value was obtained from SnO2:8% CuSb2O6 films, which was approximately 1.3 x 10(-3) Omega cm, while its optical transmittance is relatively poor with similar to 46% at 6000 angstrom. The highest optical transmittance value was obtained from SnO2:2% CuSb2O6 films, which was about 80% at 6000 angstrom, where its electrical resistivity value was 5.9 x 10(-3) Omega cm.

引用

页码：34 / 40

页数：7

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