Apparatus for real-time measurement of stress in thin films at elevated temperatures

被引：3

作者：

An, B ^{[1
]}

Zhang, TJ ^{[1
]}

Yuan, C ^{[1
]}

Cui, K ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, State Key Lab Plast Forming Simulat & Die & Mould, Wuhan 430074, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 08期

关键词：

D O I：

10.1088/0256-307X/20/8/360

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

As a prerequisite of biaxial zero creep experiments, a novel sensitive apparatus is developed for real-time film-stress measurement during thermal cycles. The optical sensor with a fixed multi-beam emitter and a CCD detector is investigated during an annealing process of Ag/Co multilayer thin film. The monitoring plots of stress as functions of temperature and time demonstrate the capability of this set-up. The typical sensitivity for measuring the wafer curvature radius is 2 km.

引用

页码：1387 / 1389

页数：3

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