Contamination of silicon during ion-implantation and annealing

被引：6
|
作者：
Liu, X [1 ]
Pohl, RO
Asher, S
Crandall, RS
机构：
[1] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷
关键词：
contamination; silicon; ion-implantation and annealing;
D O I：
10.1016/S0022-3093(98)00175-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Low temperature (<10 K) internal friction measurements have revealed a contamination of silicon during annealing under all but the most careful conditions. A similar contamination occurs during ion-implantation. Boron was suspected as a likely contaminant, but can be clearly ruled out by combining low-temperature internal friction measurements and secondary ion mass spectroscopy. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：407 / 410
页数：4
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