Epitaxial relationships of para-sexiphenyl thin films on alkali halide substrates

被引:14
作者
Yoshimoto, N [1 ]
Sato, T
Saito, Y
Ogawa, S
机构
[1] Iwate Univ, Dept Mat Sci & Engn, Morioka, Iwate 0208551, Japan
[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan
[3] Iwate Univ, Dept Chem Engn, Morioka, Iwate 0208551, Japan
关键词
epitaxial relationships; in-plane orientation; para-sexiphenyl; X-ray diffraction;
D O I
10.1080/15421400490506379
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The dependence of substrates on the epitaxial relationship of vapor deposited thin films p-sexiphenyl (p-6P) was investigated by X-ray diffractmetry. The cleaved (001) surfaces of single crystals of NaCl, KCl and KBr were used for the substrate. The temperature dependence of the film structure was also examined between 50degreesC and 170degreesC. The epitaxial relationships of both standing and lying orientations were determined for the films grown on each substrate. The observed complex patterns of in-plane orientations were explained in terms of misfit ratio.
引用
收藏
页码:279 / 288
页数:10
相关论文
共 34 条
[21]   Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates [J].
Ohtake, Mitsuru ;
Nukaga, Yuri ;
Sato, Yoichi ;
Kirino, Fumiyoshi ;
Futamoto, Masaaki .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
[22]   Epitaxial growth and characterization of Cu thin films deposited on Al2O3(0001) substrates by magnetron sputtering [J].
Lee, Ik-Jae ;
Kim, Hee Seob ;
Yun, Young Duck ;
Kang, Seen-Woong ;
Kim, Hyo-Yun ;
Kwon, Hyuk Chae ;
Kim, Jin Woo ;
Joo, Mankil ;
Kim, Younghak .
MATERIALS LETTERS, 2021, 299
[23]   Preferred orientations and epitaxial relationships of alpha-HgI2 thin films on (001)-KCl and (001)-Muscovite single crystals [J].
Chateigner, D ;
Erler, B .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 45 (1-3) :152-161
[24]   Epitaxial variants of VO2 thin films on complex oxide single crystal substrates with 3m surface symmetry [J].
Wong, Franklin J. ;
Zhou, You ;
Ramanathan, Shriram .
JOURNAL OF CRYSTAL GROWTH, 2013, 364 :74-80
[25]   Structural and optical properties of epitaxial ZnO thin films on 4H-SiC (0001) substrates prepared by pulsed laser deposition [J].
Kim, Ji-Hong ;
Cho, Dae-Hyung ;
Lee, Wonyong ;
Moon, Byung-Moo ;
Bahng, Wook ;
Kim, Sang-Cheol ;
Kim, Nam-Kyun ;
Koo, Sang-Mo .
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 489 (01) :179-182
[26]   Superconducting molybdenum nitride epitaxial thin films deposited on MgO and α-Al2O3 substrates by molecular beam epitaxy [J].
Inumaru, Kei ;
Baba, Kazuya ;
Yamanaka, Shoji .
APPLIED SURFACE SCIENCE, 2006, 253 (05) :2863-2869
[27]   Optical and surface properties of 3C-SiC thin epitaxial films grown at different temperatures on 4H-SiC substrates [J].
Wang, Bingjun ;
Yin, Junhua ;
Chen, Daihua ;
Long, Xianjian ;
Li, Lei ;
Lin, Hao-Hsiung ;
Hu, Weiguo ;
Talwar, Devki N. ;
Jia, Ren-Xu ;
Zhang, Yu-Ming ;
Ferguson, Ian T. ;
Sun, Wenhong ;
Feng, Zhe Chuan ;
Wan, Lingyu .
SUPERLATTICES AND MICROSTRUCTURES, 2021, 156
[28]   High-resolution X-ray diffraction studies of combinatorial epitaxial Ge (001) thin-films on Ge (001) substrates [J].
Zhong, Yuncheng ;
Chu, Yong S. ;
Collins, Brian A. ;
Tsui, Frank .
APPLIED SURFACE SCIENCE, 2007, 254 (03) :714-719
[29]   Very large anisotropy in the dc conductivity of epitaxial VO2 thin films grown on (011) rutile TiO2 substrates [J].
Lu, Jiwei ;
West, Kevin G. ;
Wolf, Stuart A. .
APPLIED PHYSICS LETTERS, 2008, 93 (26)
[30]   Highly oriented epitaxial CaFe2O4 thin films on TiO2 substrates grown by pulsed-laser deposition [J].
Nishiyama, Nana ;
Mashiko, Hisanori ;
Yoshimatsu, Kohei ;
Horiba, Koji ;
Kumigashira, Hiroshi ;
Ohtomo, Akira .
THIN SOLID FILMS, 2017, 638 :406-409