A 1.3-μm four-channel directly modulated laser array fabricated by SAG-Upper-SCH technology

被引：4

作者：

Guo, Fei ^{[1
]}

Lu, Dan ^{[1
]}

Zhang, Ruikang ^{[1
]}

Liu, Songtao ^{[1
]}

Sun, Mengdie ^{[1
]}

Kan, Qiang ^{[1
]}

Ji, Chen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, POB 912, Beijing 100083, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2017年 / 383卷

基金：

中国国家自然科学基金;

关键词：

Monolithically integrated laser array; Directly modulated laser; Selective area growth (SAG); Modified butt-joint;

D O I：

10.1016/j.optcom.2016.09.057

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A monolithically integrated four-channel directly modulated laser (DML) array working at the 1.3-mu m band is demonstrated. The laser was manufactured by using the techniques of selective area growth (SAG) of the upper separate confinement heterostructure (Upper-SCH) and modified butt-joint method. The fabricated device showed stable single mode operation with the side mode suppression ratio (SMSR) > 35 dB, and high wavelength accuracy with the deviations from the linear fitted values < +/- 0.03 nm for all channels. Furthermore, small signal modulation bandwidth > 7 GHz was obtained, which may be suitable for 40 GbE applications in the 1.3-mu m band.

引用

收藏

页码：577 / 580

页数：4

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