Structural, electrical and optical properties of hetrostructured MoS2/ZnO thin films for potential perovskite solar cells application

被引：28

作者：

Khan, M. I. ^{[1
]}

Ali, Sabir ^{[1
]}

Alwadai, Norah ^{[2
]}

Ikram-ul-Haq ^{[1
]}

Irfan, Muhammad ^{[1
]}

Albalawi, Hind ^{[2
]}

Almuqrin, Aljawhara H. ^{[2
]}

Almoneef, Maha M. ^{[2
]}

Iqbal, Munawar ^{[3
]}

机构：

[1] Univ Lahore, Dept Phys, Lahore 53700, Pakistan

[2] Princess Nourah bint Abdulrahman Univ PNU, Coll Sci, Dept Phys, Riyadh 11671, Saudi Arabia

[3] Univ Lahore, Dept Chem, Lahore 53700, Pakistan

来源：

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T | 2022年 / 20卷

关键词：

ZnO; MoS2; Thin films; Optical properties; Electrical properties; Solar energy; GEL DEPOSITION; PHOTOLUMINESCENCE; PHOTOVOLTAICS; DIFFERENCE; EMISSION; STRAIN;

D O I：

10.1016/j.jmrt.2022.07.082

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO, MoS2, MoS2/ZnO/glass, and ZnO/MoS2/glass thin films have been deposited on glass substrates by chemical bath deposition techniques (CBD). XRD results confirmed the formation of MoS2, ZnO, MoS2/ZnO/glass, and ZnO/MoS2/glass films. All the films have a hexagonal structure. The grain size of heterostructured (MoS2/ZnO/glass and ZnO/MoS2/ glass) films is larger than pure (ZnO and MoS2) films. The band gap energy of ZnO, MoS2, MoS2/ZnO/glass and ZnO/MoS2/glass is 3.14 eV, 1.52 eV, 1.62 eV and 2.67 eV, respectively. Photoluminescence (PL) emission peaks of ZnO are observed in the visible region. When ZnO film is deposited on MoS2 film, PL peaks are shifted to smaller wavelengths. A very high PL intensity peak of MoS2 is observed. When MoS2 film was deposited on ZnO film the peak intensity was reduced. The average sheet resistivity of glass/MoS2, glass/ZnO, MoS2/ ZnO/glass and ZnO/MoS2/glass films is 6.44 x 10(4), 7.89 x 10(3), 5.65 x 10(4), and 2.45 x 10(3) (ohm-m), respectively. These materials have potential applications in perovskite solar cells. (c) 2022 The Author(s). Published by Elsevier B.V.

引用

页码：1616 / 1623

页数：8

共 66 条

[51] Electrical control of neutral and charged excitons in a monolayer semiconductor [J].