Semiconductor drift detectors for X- and gamma-ray spectroscopy and imaging

被引：10
作者：
Fiorini, C. [1 ]
Longoni, A.
机构：
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 10期
关键词：
silicon drift detectors; readout electronics; X-ray spectroscopy; gamma-ray imaging;
D O I：
10.1016/j.nimb.2008.02.059
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The semiconductor drift detectors (SDDs) show basic advantages, in terms of spectroscopic resolution and detection rate, with respect to other semiconductor detectors. These advantages are strictly related to the very low values of the output capacitance of these devices. In this paper the working principles and the performance of the SDDs are presented and the most recent devices ("droplet type" SDDs and monolithic arrays of SDDs) are introduced. The requirements of front-end electronics for the readout of the SDDs signals are then discussed and the most recent implementations (pulsed-reset preamplifiers, multi-channel ASIC readout circuits) are introduced. Some relevant applications of SDDs in the field of X-ray spectroscopy for material analysis and for nuclear physics experiments, and in the field of gamma-ray imaging, are presented as a conclusion. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2173 / 2181
页数：9
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