Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN/GaN heterojunction: Measurement of "intrinsic" band lineup

被引：37

作者：

Wu, Chung-Lin ^{[1
]}

Lee, Hong-Mao ^{[1
]}

Kuo, Cheng-Tai ^{[1
]}

Chen, Chia-Hao ^{[2
]}

Gwo, Shangjr ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[2] NSRRC, Hsinchu 30076, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 16期

关键词：

D O I：

10.1063/1.2913204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for studying heterojunction band lineups on the submicrometer scale is demonstrated by using synchrotron-radiation photoelectron microscopy and spectroscopy. In particular, an in situ sample cleavage technique is adopted here to reveal the cross-sectional, nonpolar a-plane face of InN/GaN heterojunction grown on Si(111) along the polar -c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface. The "intrinsic" valence band offset at the cleaved InN/GaN heterojunction has been determined to be 0.78 eV. Additionally, using known material parameters, the values of InN/GaN conduction band offset and InN electron affinity are also estimated. (C) 2008 American Institute of Physics.

引用

页数：3

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