Optical properties of Si-doped InN grown on sapphire (0001)

被引:111
|
作者
Inushima, T [1 ]
Higashiwaki, M
Matsui, T
机构
[1] Tokai Univ, Dept Elect, Hiratsuka, Kanagawa 2591292, Japan
[2] Commun Res Labs, Tokyo 1848795, Japan
关键词
D O I
10.1103/PhysRevB.68.235204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The carrier concentration dependence of the interaction between free carriers and longitudinal optical (LO) phonons of InN is studied by Raman scattering and Fourier transform infrared measurements. InN is grown on a sapphire (0001) surface by plasma-assisted molecular beam epitaxy. The carrier concentration is varied from 1.8x10(18) to 1.5x10(19) cm(-3) by Si doping. The infrared reflection spectra, to which the vibration in the a-b plane contributes, reveal a linear coupling between the E-1(LO) phonon and the plasma oscillation of the free carriers. From the plasma frequency the electron effective mass is estimated to be m(eperpendicular to)(*)=0.085m(0) for the intrinsic InN. The Raman spectra, to which the vibration along the c axis contributes, reveal that the A(1)(LO) phonon and free carriers couple nonlinearly, where a Fano interference between the zone-center LO phonon and the quasicontinuum electronic state along the c axis is prominent. With these results, the anisotropic electronic structure of InN is discussed.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Control of electron density in InN by Si doping and optical properties of Si-doped InN
    Higashiwaki, M
    Inushima, T
    Matsui, T
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02): : 417 - 420
  • [2] Optical investigations on si-doped InN films
    Maleyre, B
    Briot, O
    Ruffenach, S
    Gil, B
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 4, 2005, 2 (04): : 1379 - 1383
  • [3] Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers
    Talwar, Devki N.
    Lin, Hao-Hsiung
    Feng, Zhe Chuan
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2020, 260
  • [4] Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
    XU ShengRui1
    2 School of Electronical & Machanical Engineering
    Science China(Technological Sciences), 2010, (09) : 2363 - 2366
  • [5] Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
    ShengRui Xu
    XiaoWei Zhou
    Yue Hao
    LiNan Yang
    JinCheng Zhang
    Wei Mao
    Cui Yang
    MaoShi Cai
    XinXiu Ou
    LinYu Shi
    YanRong Cao
    Science China Technological Sciences, 2010, 53 : 2363 - 2366
  • [6] Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
    XU ShengRuiZHOU XiaoWeiHAO YueYANG LiNanZHANG JinChengMAO WeiYANG CuiCAI MaoShiOU XinXiuSHI LinYu CAO YanRong Key Lab of Wide Band Gap Semiconductor Materials and DevicesInstitute of MicroelectronicsXidian UniversityXian China School of Electronical Machanical EngineeringXidian UniversityXian China
    Science China(Technological Sciences), 2010, 53 (09) : 2363 - 2366
  • [7] Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
    Xu ShengRui
    Zhou XiaoWei
    Hao Yue
    Yang LiNan
    Zhang JinCheng
    Mao Wei
    Yang Cui
    Cai MaoShi
    Ou XinXiu
    Shi LinYu
    Cao YanRong
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 53 (09) : 2363 - 2366
  • [8] Structural properties of 10 μm thick InN grown on sapphire (0001)
    Dimakis, E.
    Domagala, J. Z.
    Delimitis, A.
    Komninou, Ph.
    Adikimenakis, A.
    Iliopoulos, E.
    Georgakilas, A.
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 246 - 252
  • [9] Characterization of Si-doped GaN on (00.1) sapphire grown by MOCVD
    Kim, CS
    Lee, DK
    Lee, CR
    Noh, SK
    Lee, IH
    Bae, IH
    NITRIDE SEMICONDUCTORS, 1998, 482 : 567 - 572
  • [10] Optical and microstructural characterisation of InN grown by PAMBE on (0001) sapphire and (001) YSZ
    Anderson, PA
    Kendrick, CE
    Lee, TE
    Diehl, TE
    Diehl, W
    Reeves, RJ
    Kennedy, VJ
    Markwitz, A
    Kinsey, RJ
    Durbin, SM
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 231 - 236