Cleaning effect of ZnSe surface by hydrogen treatment

被引：3

作者：

Sasaki, Y ^{[1
]}

Ohashi, M ^{[1
]}

Tsubono, I ^{[1
]}

Kimura, N ^{[1
]}

Sawada, T ^{[1
]}

Suzuki, K ^{[1
]}

Imai, K ^{[1
]}

Saito, H ^{[1
]}

机构：

[1] Hokkaido Inst Technol, Teine Ku, Sapporo, Hokkaido 0068585, Japan

来源：

11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS | 2004年 / 1卷 / 04期

关键词：

D O I：

10.1002/pssc.200304186

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It has been revealed that the oxide layer which covers ZnSe is removed by very simple hydrogen (H,) gas treatments. The H, gas was clacked by a tungsten heater set in a ceramic tube. The apparatus of the gas irradiation is inserted into the growth chamber of MBE through a K-cell port. The RHEED patterns of oxidized ZnSe surfaces show drastic change from spotty to streaky ones after exposure to the clacked H, gas. The photoluminescence spectra of the H, treated ZnSe indicate (A(0), x), SA- and Cu-green-like structures. The temperature of the substrate was kept at 340 degreesC during the H-2 treatment, which is the growth temperature of MBE-ZnSe.

引用

页码：670 / 673

页数：4

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