Anisotropic inter-action of Ag-induced missing dimer vacancies on Si(001) surfaces

被引：14
|
作者：
Chang, CS
Huang, YM
Chen, CC
Tsong, TT
机构：
[1] Institute of Physics, Academia Sinica, Nankang, Taipei
来源：
SURFACE SCIENCE | 1996年 / 367卷 / 01期
关键词：
dimer vacancy; dimer vacancy line; scanning tunneling microscopy (STM); surface stress;
D O I：
10.1016/S0039-6028(96)00996-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ag-induced missing dimer vacancies on Si(001)2 x 1 surfaces are shown to form vacancy lines when the vacancy concentration is larger than similar to 10%. The formation of the vacancy lines is driven by the short-range attractive interaction between the vacancies in adjacent dimer rows and the long-range repulsive interaction between them in the same dimer row. The form and magnitudes of the interactions are derived from the thermally-excited wandering of the vacancy lines.
引用
收藏
页码：L8 / L12
页数：5
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