Low-frequency noise characteristics of GaN vertical PIN diodes-Effects of design, current, and temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current, and temperature. The as-grown and regrown diodes, with and without surface treatment, have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S-I, dependence on the current was S-I & SIM; I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10(-18)-10(-16) cm(2)/Hz (f = 10 Hz) at the current density J = 1 A/cm(2) at room temperature. The noise temperature dependences at different currents revealed peaks at T = 375-400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. We argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.