Film stoichiometry and gas dissociation kinetics in hot-wire chemical vapor deposition of a-SiGe:H

被引：5

作者：

Doyle, James R. ^{[1
,2
]}

Xu, Yueqin ^{[1
]}

Reedy, Robert ^{[1
]}

Branz, Howard M. ^{[1
]}

Mahan, A. Harv ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80231 USA

[2] Macalester Coll, Dept Phys & Astron, St Paul, MN 55105 USA

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

基金：

美国国家科学基金会;

关键词：

hot-wire deposition; amorphous silicon germanium alloys;

D O I：

10.1016/j.tsf.2007.06.189

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The gas phase dissociation rates of silane and germane are measured for HWCVD on a tantalum filament and compared to the a-SiGe:H film composition. The Ge from dissociated germane is converted entirely into film on the substrate and chamber walls. Approximately 85% of the Si from the dissociated silane is converted into film, with the rest incorporated into the filament. The dissociation rate per unit partial pressure of germane is 2-3 times that of silane. The pressure dependence of feed gas depletion rates suggests that the dissociation on the filament is rate limited by filament reactive site availability. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：526 / 528

页数：3

共 9 条

[1]

Adamson A.W., 1967, Physical Chemistry of Surfaces, V15

[2]

Datta S, 2005, MATER RES SOC SYMP P, V862, P49

[3] PRODUCTION OF HIGH-QUALITY AMORPHOUS-SILICON FILMS BY EVAPORATIVE SILANE SURFACE DECOMPOSITION [J].

DOYLE, J ;

ROBERTSON, R ;

LIN, GH ;

HE, MZ ;

GALLAGHER, A .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) :3215-3223

[4] The influence of filament material on radical production in hot wire chemical vapor deposition of a-Si:H [J].

Duan, HL ;

Bent, SF .

THIN SOLID FILMS, 2005, 485 (1-2) :126-134

[5] Gas phase and surface kinetic processes in polycrystalline silicon hot-wire chemical vapor deposition [J].

Holt, JK ;

Swiatek, M ;

Goodwin, DG ;

Muller, RP ;

Goddard, WA ;

Atwater, HA .

THIN SOLID FILMS, 2001, 395 (1-2) :29-35

[6] Hot wire chemical vapor deposition of Si containing materials for solar cells [J].

Mahan, AH .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 78 (1-4) :299-327

[7] Deposition of photosensitive hydrogenated amorphous silicon-germanium films with a tantalum hot wire [J].

Xu, YQ ;

Mahan, AH ;

Gedvilas, LM ;

Reedy, RC ;

Branz, HM .

THIN SOLID FILMS, 2006, 501 (1-2) :198-201

[8] Improving narrow bandgap a-SiGe:H alloys grown by hot-wire chemical vapor deposition [J].

Xu, YQ ;

Nelson, BP ;

Gedvilas, LM ;

Reedy, RC .

THIN SOLID FILMS, 2003, 430 (1-2) :197-201

[9] Hot wire radicals and reactions [J].

Zheng, W ;

Gallagher, A .

THIN SOLID FILMS, 2006, 501 (1-2) :21-25

← 1 →