Simulation of waveguiding and emitting properties of semiconductor nanowires with hexagonal or circular sections

被引：57
作者：
Henneghien, Anne-Line [1 ]
Gayral, Bruno [2 ]
Desieres, Yohan [1 ]
Gerard, Jean-Michel [2 ]
机构：
[1] CEA, LETI, MINATEC, F-38054 Grenoble, France
[2] CEA, CNRS Grp Nanophys & Semicond, INAC SP2M, F-38054 Grenoble, France
来源：
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2009年 / 26卷 / 12期
关键词：
SPONTANEOUS EMISSION; CAVITY; LASER;
D O I：
10.1364/JOSAB.26.002396
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Nanowires as an active medium are promising for getting high brightness light emitting diodes. Semiconductors such as GaN and ZnO grow as nanowires with a hexagonal cross section and their optical properties have been little explored. We study important properties for nanowire LED optimization. In particular we review the modal properties of hexagonal nanowires and compare them with those of circular nanowires. We also study the modal reflectivity of guided modes at nanowire end facets and explore the relevance of a comparison with plane-wave reflectivity. Finally we analyze the distribution of the emitted power in three different cases: a single point emitter and an axial and a radial nanowire heterostructure. (C) 2009 Optical Society of America
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页码：2396 / 2403
页数：8
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