Low LO power V-band CPW down-converter using a GaAs PHEMT

We have designed and fabricated a low local oscillator (LO) power V-band coplanar waveguide (CPW) down-converter using GaAs Pseudomorphic high electron mobility transistor (PHEMT) technology for applications to millimeter-wave wireless communication systems. The down-converter was designed using a MIMIC library, including a 0.1-mum GaAs PHEMT and CPW transmission lines. The fabricated down-converter exhibited a good conversion gain of 2 dB at a low LO power of 0 dBm. The 1 dB compression point was -5.2 dBm for an RF input power of -6 dBm. Isolations between the LO port and other ports were excellent. The total chip size was 1.8x1.7 mm.