In situ measurements of GaN photoluminescence at metal and electrolyte contacts

被引:7
作者
Harvey, E [1 ]
Heffernan, C
Buckley, DN
O'Raifeartaigh, C
机构
[1] Univ Limerick, Mat & Surface Sci Inst, Limerick, Ireland
[2] Univ Limerick, Dept Phys, Limerick, Ireland
[3] Waterford Inst Technol, Waterford, Ireland
关键词
D O I
10.1063/1.1518156
中图分类号
O59 [应用物理学];
学科分类号
摘要
The characteristics of GaN photoluminescence have been measured in situ as a function of potential at gold and electrolyte contacts. In the case of the GaN/electrolyte contact, it was found that for aqueous KOH and sulfate-based electrolytes over a pH range of 0-14, the photoluminescence intensity increased sharply at applied potentials close to the flatband value. In contrast, no significant increase in photoluminescence intensity above the open-circuit value was measured for the GaN/Au contact. In this case, the photoluminescence intensity was reduced under reverse biased conditions and the photoluminescence was effectively quenched at reverse potentials above 7.5 V. (C) 2002 American Institute of Physics.
引用
收藏
页码:3191 / 3193
页数:3
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