A Low-Power Scan Driver Circuit for Oxide TFTs

被引：20

作者：

Pi, Jae-Eun ^{[1
]}

Ryu, MinKi ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Yang, ShinHyuk ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Yoon, Sung-Min ^{[2
]}

Leem, HongKyun ^{[3
]}

Kim, YounKyung ^{[3
]}

Kim, JoonDong ^{[3
]}

Oh, Hwan Sool ^{[3
]}

Park, KeeChan ^{[3
]}

机构：

[1] Elect & Telecommun Res Inst, Oxide Elect Res Team, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

[2] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 446701, South Korea

[3] Konkuk Univ, Dept Elect Engn, Seoul 143701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 08期

关键词：

Low power; negative threshold voltage; oxide thin-film transistors (TFTs); scan driver;

D O I：

10.1109/LED.2012.2200873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scan driver composed of oxide thin-film transistors (TFTs) tends to exhibit anomalously high power consumption because the oxide TFT often has negative threshold voltage. In order to resolve this problem, we have invented a new scan driver circuit in which most TFTs are turned off with negative V-GS and no TFT with zero V-GS is located between the high and low supply voltages. As a result, we could maintain the power consumption within six times of the normal value in spite of the negative threshold voltage of the oxide TFT.

引用

页码：1144 / 1146

页数：3

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