Ion irradiation-induced local structural changes in amorphous Ge2Sb2Te5 thin film

被引：52

作者：

De Bastiani, R. ^{[1
,2
]}

Piro, A. M. ^{[1
,2
]}

Grimaldi, M. G. ^{[1
,2
]}

Rimini, E. ^{[1
,3
]}

Baratta, G. A. ^{[4
]}

Strazzulla, G. ^{[4
]}

机构：

[1] Univ Catania, Dipartimento Fis Astron, I-95123 Catania, Italy

[2] INFM, CNR, MATIS, I-95123 Catania, Italy

[3] CNR, IMM, I-95121 Catania, Italy

[4] Osserv Astrofis Catania, INAF, I-95123 Catania, Italy

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2945880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystallization kinetics of as-deposited and ion implanted amorphous Ge2Sb2Te5 thin films has been measured by time resolved reflectivity. An enhancement of the crystallization process occurred in the implanted samples. Raman scattering analysis was used to correlate the stability of the amorphous phase to its structure. The variation of the Raman signal after ion irradiation is consistent with a reduction in Ge-Te tetrahedral bonds, characteristic of the Ge coordination in amorphous Ge2Sb2Te5. (C) 2008 American Institute of Physics.

引用

页数：3

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