High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy

被引：359
作者：
Tadatomo, K
Okagawa, H
Ohuchi, Y
Tsunekawa, T
Imada, Y
Kato, M
Taguchi, T
机构：
[1] Mitsubishi Cable Ind Ltd, Photon Res Lab, Itami, Hyogo 6640027, Japan
[2] Stanley Elect Co Ltd, Dept Res & Dev, Yokohama, Kanagawa 2250014, Japan
[3] Yamaguchi Univ, Fac Engn, Yamaguchi 7558611, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 6B期
关键词：
GaN; InGaN; UV-LED; SAG; ELO; sapphire; MOVPE;
D O I：
10.1143/JJAP.40.L583
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultraviolet (UV) light-emitting diodes (LEDs) with an InGaN multi-quantum-well (MQW) structure were fabricated on a patterned sapphire substrate (PSS) using a single growth process of metalorganic vapor phase epitaxy. In this study, the PSS with parallel grooves along the [11 (2) over bar0](sapphire) direction was fabricated by standard photolithography and subsequent reactive ion etching (RIE). The GaN layer grown by lateral epitaxy on a patterned substrate (LEPS) has a dislocation density of 1.5 x 10(8) cm(-2). The LEPS-UV-LED chips were mounted on the Si bases in a flip-chip bonding arrangement. When the LEPS-UV-LED was operated at a forward-bias current of 20 mA at room temperature, the emission wavelength, the output power and the external quantum efficiency were estimated to be 382 nm, 15.6 mW and 24%, respectively. With increasing forward-bias current, the output power increased linearly and was estimated to be approximately 38 mW at 50 mA.
引用
收藏
页码：L583 / L585
页数：3
相关论文
共 19 条
[1]   Low-dislocation-density GaN from a single growth on a textured substrate [J].
Ashby, CIH ;
Mitchell, CC ;
Han, J ;
Missert, NA ;
Provencio, PP ;
Follstaedt, DM ;
Peake, GM ;
Griego, L .
APPLIED PHYSICS LETTERS, 2000, 77 (20) :3233-3235
[2]   Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: A new approach for growing low-dislocation-density GaN single crystals [J].
Detchprohm, T ;
Yano, M ;
Sano, S ;
Nakamura, R ;
Mochiduki, S ;
Nakamura, T ;
Amano, H ;
Akasaki, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (1AB) :L16-L19
[3]   Anisotropic epitaxial lateral growth in GaN selective area epitaxy [J].
Kapolnek, D ;
Keller, S ;
Vetury, R ;
Underwood, RD ;
Kozodoy, P ;
Baars, SPD ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 1997, 71 (09) :1204-1206
[4]   SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY [J].
KATO, Y ;
KITAMURA, S ;
HIRAMATSU, K ;
SAWAKI, N .
JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) :133-140
[5]   Improvement of crystalline quality in GaN films by air-bridged lateral epitaxial growth [J].
Kidoguchi, I ;
Ishibashi, A ;
Sugahara, G ;
Tsujimura, A ;
Ban, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (5B) :L453-L456
[6]   HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].
LESTER, SD ;
PONCE, FA ;
CRAFORD, MG ;
STEIGERWALD, DA .
APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251
[7]  
Li X, 1996, MATER RES SOC SYMP P, V395, P943
[8]   Pendeoepitaxy of gallium nitride thin films [J].
Linthicum, K ;
Gehrke, T ;
Thomson, D ;
Carlson, E ;
Rajagopal, P ;
Smith, T ;
Batchelor, D ;
Davis, R .
APPLIED PHYSICS LETTERS, 1999, 75 (02) :196-198
[9]  
MATSUSHIMA H, 1997, P 2 INT C NITR SEM T, P492
[10]   Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates [J].
Mukai, T ;
Nakamura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (10) :5735-5739
12