Optical quenching of photoconductivity in CdSe single nanowires via waveguiding excitation

被引:12
作者
Gu, Fuxing [1 ]
Wang, Pan [1 ]
Yu, Huakang [1 ]
Guo, Bing [1 ]
Tong, Limin [1 ]
机构
[1] Zhejiang Univ, Dept Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China
基金
中国国家自然科学基金;
关键词
PHOTODETECTORS; GUIDES;
D O I
10.1364/OE.19.010880
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate broadband optical quenching of photoconductivity in CdSe single nanowires with low excitation power. Using 1550-nm-wavelength light with 10-nW power for waveguiding excitation, we observe a typical responsivity of 0.5 A/W for quenching the photoconductivity established by 10-mu W 660-nm-wavelength background light in a 403-nm-diameter CdSe nanowire, with detectable limit of the quenching power down to pW level at room temperature, which is several orders of magnitude lower than those reported previously. This large quenching effect originates from the enhanced light-defect interaction in the nanowires via waveguiding excitation. These results open new opportunities for noninvasive characterization of deep-level defect states in low-dimensional semiconductor nanomaterials, and novel optoelectronic applications of semiconductor nanowires such as high-sensitive broadband photodetection. (C) 2011 Optical Society of America
引用
收藏
页码:10880 / 10885
页数:6
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