Strong and stable red photoluminescence from porous silicon prepared by Fe-contaminated silicon

被引:13
作者
Lee, DY
Park, JW
Leem, JY
Kim, JS
Kang, SK
Son, JS
Kang, HB
Mun, YH
Lee, DK
Kim, DH
Bae, IH [1 ]
机构
[1] Yeungnam Univ, Dept Phys, Gyongsan 712749, South Korea
[2] Inje Univ, Sch Nano Engn, Gimhae 621749, South Korea
[3] Natl Inst Mat Sci, Nanomat Lab, Ibaraki 3050047, Japan
[4] Kyung Hee Univ, Dept Phys, Suwon 449701, South Korea
[5] Kyungwoon Univ, Dept Visual Opt, Gumi 730850, South Korea
[6] LG Siltron, Wafering R&D Ctr, Gumi 730724, South Korea
关键词
low dimensional structures; nanostructures; electrochemical growth; nanomaterials; semiconducting silicon;
D O I
10.1016/j.jcrysgro.2003.09.008
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Strong red photoluminescence (PL) spectra appeared at porous silicon (PS) samples prepared by a chemical anodization of Fe-contaminated Si substrates. The Fe1000 sample with Fe contamination of 1000ppb showed a ten times stronger red PL than that of the reference PS sample without any Fe contamination, and this sample also showed the higher thermal stability for PL spectra as compared with the reference PS sample. Furthermore, the PL intensity from the PS with Fe contamination is linearly proportional to the Fe-related trap concentrations of Si substrates obtained from DLTS. Especially, all the PS samples exhibit the same PL peak position regardless of Fe contamination concentrations, as compared with that of the reference PS. This means that there is no significant effect such as the variation of size distribution of nanocrystalline Si in PS layer formed on Fe-contaminated Si substrate. Based on the results of PL and DLTS, we found that the PL efficiency depends strongly on the Fe-related trap concentration in Si substrates. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:394 / 399
页数:6
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