Observation of negative differential resistance in SiO2/Si heterostructures

被引：3
|
作者：
Jia, Lemin [1 ]
Zheng, Wei [1 ]
Huang, Feng [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
来源：
CELL REPORTS PHYSICAL SCIENCE | 2021年 / 2卷 / 11期
基金：
中国国家自然科学基金;
关键词：
ELECTRONIC-STRUCTURE; TRANSPORT; SILICON;
D O I：
10.1016/j.xcrp.2021.100622
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The negative differential resistance (NDR) effect been widely reported in the physical systems of traditional semiconductors, and corresponding theoretical mechanisms are known and applied. However, exploring the origin of NDR phenomena emerging in new structures or conditions remains a worthwhile challenge. Here, we report an experimental observation of an NDR effect based on SiO2/Si heterojunctions by injecting photo-generated carriers via vacuum ultraviolet (VUV) irradiation. We propose a complex competition mechanism between trap centers' and recombination centers' dominating carrier transport behavior. This is caused by the difference in spatial distribution of density of band-tail states and defect states in SiO2/Si. This work may inspire further consideration of SiO2/Si heterojunctions for electronic applications.
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页数：10
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