Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation

被引:4
作者
Lee, W. J. [1 ]
Cho, M. -H. [1 ]
Kim, Y. K. [1 ]
Baeck, J. H. [1 ]
Jeong, I. S. [1 ]
Jeong, K. [1 ]
Chung, K. B. [2 ]
Kim, S. Y. [3 ]
Ko, D. -H. [3 ]
机构
[1] Yonsei Univ, Dept Phys & Appl Phys, Seoul 120749, South Korea
[2] Dankook Univ, Dept Phys, Cheonan 330714, South Korea
[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
关键词
Gadolinium oxide; Annealing; Ammonia; Nitridation; Silicides; Zr-silicate; Interfacial reactions; X-ray diffraction; X-ray photoelectron spectroscopy; Near edge X-ray absorption spectroscopy; RAY PHOTOELECTRON-SPECTROSCOPY; THIN-FILMS; THERMAL-STABILITY; VAPOR-DEPOSITION; GADOLINIUM OXIDE; GATE DIELECTRICS; SILICON; STATES;
D O I
10.1016/j.tsf.2009.11.071
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated Gd2O3 and Zr-incorporated Gd2O3 films grown on Si (100) as a function of nitridation temperature under an NH3 ambient and the incorporation of Zr into the film. The formation of a silicide layer at the interfacial region was suppressed in cases of ZF-incorporated or NH3-nitried Gd2O3 films. The crystalline structure was affected when zirconium, With a relatively small ionic radius, was substituted with gadolinium. When the concentration of Zr atoms in a Gd2O3 film reaches a specific level (Gd0.6Zr1.9O4.3), phase transition occurred from cubic Gd2O3 to monoclinic ZrO2. However, the monoclinic phase disappeared after nitridation at 900 degrees C in an NH3 ambient. The majority of the nitrogen atoms accumulated near the interface in the films and the concentration of incorporated N increased with increasing Zr content and NH3 annealing temperature. Moreover, nitrogen atoms bonded to Zr-silicate at the interface, in preference to ZrO2 in the film. These incorporation characteristics of nitrogen into Zr-incorporated Gd2O3 film have an effect on the thermal stability and crystalline structure of a film. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1682 / 1688
页数:7
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