Refinement of β-Si3N4 single crystal grown from silicon melt

被引：4

作者：

Yamamoto, Y

Hirosaki, N

Ishikawa, I

Ye, JP

Matsuo, K

Furuya, K

Munakata, F

Akimune, Y

机构：

[1] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 3050044, Japan

[2] Nissan ARC Ltd, Dept Res, Yokosuka, Kanagawa 2378593, Japan

[3] Nissan Motor Co Ltd, Mat Res Lab, Yokosuka, Kanagawa 2378593, Japan

[4] Natl Inst Adv Interdisciplinary Res, Tsukuba, Ibaraki 3058562, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2000年 / 108卷 / 05期

关键词：

silicon nitride; single crystal; purification; morphology;

D O I：

10.2109/jcersj.108.1257_515

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon powder in a reaction-sintered silicon nitride crucible was heated at 1600 degrees C in a nitrogen atomosphere. Clustered beta-Si3N4 Single crystals were obtained in residual silicon metal after cooling, The silicon residuals were dissolved by chemical purification using a mixture of aqueous HF and HNO3, and subsequently treated and with H2SO4, Scanning electron microscopy observation showed that large beta-Si3N4 crystals without Si residuals could be successfully separated by this process.

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页码：515 / 517

页数：3

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