Short-Term Plasticity and Synaptic Filtering Emulated in Electrolyte-Gated IGZO Transistors

被引：71

作者：

Wan, Xiang ^{[1
]}

Yang, Yi ^{[1
]}

Feng, Ping ^{[1
]}

Shi, Yi ^{[1
]}

Wan, Qing ^{[1
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 03期

基金：

美国国家科学基金会;

关键词：

Artificial synaptic devices; electric-double-layer transistors; neuromorphic systems; ARTIFICIAL SYNAPSES; MEMORY;

D O I：

10.1109/LED.2016.2517080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Artificial synaptic devices have attracted a broad interest for hardware implementation of brain-inspired neuromorphic systems. In this letter, a short-term plasticity simulation in an indium-gallium-zinc oxide (IGZO) electric-double-layer (EDL) transistor is investigated. For synaptic facilitation and depression function emulation, three-terminal EDL transistor is reduced to a two-terminal synaptic device with two modified connection schemes. Furthermore, high-pass and low-pass filtering characteristics are also successfully emulated not only for fixed-rate spike train but also for Poisson-like spike train. Our results suggest that IGZO-based EDL transistors operated in two terminal mode can be used as the building blocks for brain-like chips and neuromorphic systems.

引用

页码：299 / 302

页数：4

共 23 条

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