Synthesis of Zn1-xMgxO and its structural characterization

被引:28
作者
Tomar, MS [1 ]
Melgarejo, R
Dobal, PS
Katiyar, RS
机构
[1] Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA
[2] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA
关键词
D O I
10.1557/JMR.2001.0127
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zn1-xMgxO is an important material for optoelectronic devices. We synthesized this material using a solution-based route. We investigated in detail the structural behavior of this material system using x-ray diffraction and Raman spectroscopy, Mg substitution up to x approximate to 0.10 does not change the crystal structure, as revealed by x-ray diffraction and Raman spectroscopic studies. This synthesis route is also suitable to prepare thin films by spin coating with the possibility of p and n doping.
引用
收藏
页码:903 / 906
页数:4
相关论文
共 15 条
[1]   ZnO diode fabricated by excimer-laser doping [J].
Aoki, T ;
Hatanaka, Y ;
Look, DC .
APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258
[2]   RESONANT RAMAN-SCATTERING IN ZNO [J].
CALLEJA, JM ;
CARDONA, M .
PHYSICAL REVIEW B, 1977, 16 (08) :3753-3761
[3]   Photoluminescence from indented MgO crystals using a near ultraviolet/visible Raman microscope [J].
Chaudhri, MM ;
Sands, HS .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :785-791
[4]   RAMAN EFFECT IN ZINC OXIDE [J].
DAMEN, TC ;
PORTO, SPS ;
TELL, B .
PHYSICAL REVIEW, 1966, 142 (02) :570-&
[5]   ELECTRONIC AND IMPURITY-INDUCED RAMAN-SCATTERING IN MGO-CO2+ [J].
GUHA, S .
PHYSICAL REVIEW B, 1980, 21 (12) :5808-5812
[6]   1ST-ORDER RAMAN-SCATTERING IN MGO MICROCRYSTALS [J].
ISHIKAWA, K ;
FUJIMA, N ;
KOMURA, H .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (03) :973-975
[7]   p-type electrical conduction in ZnO thin films by Ga and N codoping [J].
Joseph, M ;
Tabata, H ;
Kawai, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A) :L1205-L1207
[8]  
LONDON R, 1964, ADV PHYS, V13, P423
[9]   Residual native shallow donor in ZnO [J].
Look, DC ;
Hemsky, JW ;
Sizelove, JR .
PHYSICAL REVIEW LETTERS, 1999, 82 (12) :2552-2555
[10]   Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering [J].
Matsumoto, Y ;
Murakami, M ;
Jin, ZW ;
Ohtomo, A ;
Lippmaa, M ;
Kawasaki, M ;
Koinuma, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (6AB) :L603-L605