Electric field unbalance for robust floating ring termination

被引：10

作者：

Villamor-Baliarda, A. ^{[1
,2
]}

Vanmeerbeek, P. ^{[2
]}

Roig, J. ^{[2
]}

Moens, P. ^{[2
]}

Flores, D. ^{[1
]}

机构：

[1] IMB CNM CSIC, Inst Microelect Barcelona, Barcelona 08193, Spain

[2] ON Semicond, B-9700 Oudenaarde, Belgium

来源：

MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 9-11期

关键词：

VOLTAGE;

D O I：

10.1016/j.microrel.2011.06.037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electric field balancing in the guard-ring edge termination structure of 600 V class Super-Junction devices is studied. The relation of the lateral electric field across the racetrack structure and the robustness of the structure against avalanche currents is investigated through experimental data and TCAD simulations. It has been found that the electrical field must be substantially imbalanced to achieve good ruggedness. The effect of the P-ring dose on the electrical performances of punch-through PiN diodes is also investigated. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1959 / 1963

页数：5

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