Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ=905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure

被引：4

作者：

Soboleva, O. S. ^{[1
]}

Golovin, V. S. ^{[1
]}

Yuferev, V. S. ^{[1
]}

Gavrina, P. S. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

Slipchenko, S. O. ^{[1
]}

Podoskin, A. A. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2020年 / 54卷 / 05期

关键词：

laser thyristor; current localization; AlGaAs; GaAs; impact ionization; transport in heterostructures; INJECTION PROCESSES; EFFICIENCY; NANOSECOND; SATURATION;

D O I：

10.1134/S1063782620050140

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A 2D carrier transport model to be used in studying the spatial current dynamics in laser thyristors is presented. The model takes into account such features as optical feedback, impact ionization, and drift velocity saturation in strong electric fields. It is shown that there is current localization during laser-thyristor switch-on. A relationship is demonstrated between the distribution nonuniformity of the control current and its amplitude and position of the initial switch-on region. The time of laser-thyristor switch-on is 13 ns at a feed voltage of 26V, with a time of switch-on spreading over the entire 200-mu m stripe width of 65 ns. These parameters remain invariable irrespective of the switch-on spatial dynamics.

引用

页码：575 / 580

页数：6

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