Hybrid flexible ambipolar thin-film transistors based on pentacene and ZnO capable of low-voltage operation

被引：6

作者：

Yang, Chanwoo ^{[1
]}

Yoo, Eun Joo ^{[2
]}

Lee, Seung Woo ^{[2
]}

An, Tae Kyu ^{[3
]}

Kim, Se Hyun ^{[2
]}

机构：

[1] Pohang Univ Sci & Technol, Polymer Res Inst, Organ Elect Lab, Dept Chem Engn, 77 Cheongam Ro, Pohang 37673, South Korea

[2] Yeungnam Univ, Sch Chem Engn, 280 Daehak Ro, Gyongsan 38541, Gyeongbuk, South Korea

[3] Korea Natl Univ Transportat, Dept Polymer Sci & Engn, 50 Daehak Ro, Chungju 27469, South Korea

来源：

CHINESE JOURNAL OF PHYSICS | 2016年 / 54卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

Organic thin-film transistor (OTFT); Flexible transistor; ZnO; Ambipolar transistor; Low-voltage operation; FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTORS; MOLECULAR DESIGN; TRANSPORT; MOBILITY; BILAYER; POLYMER; DEVICES; BLENDS; OTFTS;

D O I：

10.1016/j.cjph.2016.06.004

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A flexible ambipolar thin-film transistor (TFT) was developed that consisted of a pentacene layer and a ZnO layer modified with a dodecanoic acid self-assembled monolayer on a flexible polyarylate substrate. The TFT exhibited balanced hole and electron mobilities of 0.3 and 0.2 cm(2) V-1 s(-1) and showed flexible thin-film characteristics. Additionally, because the anodized Al2O3 dielectric layer is a high kappa material compared with a normal SiO2 dielectric layer, the flexible ambipolar TFT was able to operate at a low voltage of 5 V. (C) 2016 The Physical Society of the Republic of China (Taiwan). Published by Elsevier B.V. All rights reserved.

引用

收藏

页码：471 / 474

页数：4

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