Characteristics of photoelastic waveguides in SiGe/Si heterostructures

被引：10

作者：

Lea, E

Weiss, BL

机构：

[1] Dept. of Electron. and Elec. Eng., University of Surrey, Guildford

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 04期

关键词：

photoelasticity; integrated optics; silicon-germanium;

D O I：

10.1049/el:19970206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Singlemode photoelastic stripe waveguides with excess losses of -2.7dBcm(-1) at a wavelength of 1.523 mu m fabricated in SiGe/Si planar heterostructure waveguides using Si3N4 stressor layers are reported.

引用

页码：292 / 293

页数：2

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