Self-organized ZnO nanodot arrays: Effective control using SiNx interlayers and low-temperature plasmas

被引:40
作者
Huang, S. Y. [1 ,2 ]
Cheng, Q. J. [3 ,4 ]
Xu, S. [1 ,2 ]
Wei, D. Y. [1 ,2 ]
Zhou, H. P. [1 ,2 ]
Long, J. D. [5 ]
Levchenko, I. [3 ,4 ]
Ostrikov, K. [3 ,4 ]
机构
[1] Nanyang Technol Univ, Plasma Sources & Applicat Ctr, NIE, Singapore 637616, Singapore
[2] Nanyang Technol Univ, Inst Adv Studies, Singapore 637616, Singapore
[3] CSIRO Mat Sci & Engn, Lindfield, NSW 2070, Australia
[4] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia
[5] Natl Univ Singapore, Solar Energy Res Inst Singapore SERIS, Singapore 117574, Singapore
基金
澳大利亚研究理事会; 中国国家自然科学基金; 新加坡国家研究基金会;
关键词
QUANTUM DOTS; FABRICATION; GROWTH; FREQUENCY; OPERATION; DENSITY; LAYER; RAMAN;
D O I
10.1063/1.3673593
中图分类号
O59 [应用物理学];
学科分类号
摘要
An advanced inductively coupled plasma (ICP)-assisted rf magnetron sputtering deposition method is developed to synthesize regular arrays of pear-shaped ZnO nanodots on a thin SiNx buffer layer pre-deposited onto a silicon substrate. It is shown that the growth of ZnO nanodots obey the cubic root-law behavior. It is also shown that the synthesized ZnO nanodots are highly-uniform, controllable by the experimental parameters, and also feature good structural and photoluminescent properties. These results suggest that this custom-designed ICP-based technique is very effective and highly-promising for the synthesis of property- and size-controllable highly-uniform ZnO nanodots suitable for next-generation light emitting diodes, energy storage, UV nanolasers, and other applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673593]
引用
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页数:3
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