Binding energy and optical absorption of donor impurity states in "12-6" tuned GaAs/GaAlAs double quantum well under the external fields

被引：11

作者：

Kasapoglu, E. ^{[1
]}

Sakiroglu, S. ^{[2
]}

Sari, H. ^{[3
]}

Sokmen, I ^{[2
]}

Duque, C. A. ^{[4
]}

机构：

[1] Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuz Eylul Univ, Fac Sci, Phys Dept, TR-35390 Izmir, Turkey

[3] Cumhuriyet Univ, Fac Educ, Dept Math & Nat Sci Educ, TR-58140 Sivas, Turkey

[4] Univ Antioquia UdeA, Inst Fis, Fac Ciencias Exactas & Nat, Grp Mat Condensada UdeA, Calle 70 52-21, Medellin, Colombia

来源：

PHYSICA B-CONDENSED MATTER | 2019年 / 554卷

关键词：

Double quantum well; Absorption coefficient; Donor impurity; Electric and magnetic field; HYDROSTATIC-PRESSURE; LASER FIELD; COEFFICIENTS; RECTIFICATION; TEMPERATURE; SINGLE; DOTS;

D O I：

10.1016/j.physb.2018.11.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the binding energies of the s-symmetric ground and first excited shallow donor impurity states and the total 1s -> 2s absorption coefficient, including the first and third order corrections, in "12-6" tuned GaAs/GaAlAs double quantum well as a function of the impurity position, size of the structure, and the electric and magnetic field intensities. The obtained results show that the electronic and optical properties of tuned GaAs/GaAlAs double quantum well can be adjustable by an appropriate choice of the sample geometry, material parameters and applied external fields which will lead to new potential applications in optoelectronics.

引用

页码：72 / 78

页数：7

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