Pd/InAlN Schottky diode with low reverse current by sulfide treatment

被引：5

作者：

Chen, Z. T. ^{[1
]}

Fujita, K. ^{[1
]}

Egawa, T. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 18期

关键词：

FIELD-EFFECT TRANSISTORS; SOLID-STATE; PASSIVATION; PHOTOELECTRON; ELECTRONICS; SURFACE; LAYERS; GAN;

D O I：

10.1063/1.3659477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the effect of sulfide treatment on electrical characteristic of Pd/InAlN Schottky diode. Quantitative analysis considering different current-transport mechanisms revealed that the sulfide treatment not only significantly reduced leakage current but also almost completely suppressed a tunneling current between InAlN surface and Pd contact, which could be attributed to the surface passivation of InAlN with forming S-N and S-O bonds as revealed by x-ray photoelectron spectroscopy (XPS) measurements. As a result of the treatment, the reverse-biased current was reduced significantly by more than one order of magnitude at 5V to be as low as 3.95 x 10(-8) A/cm(2), and by more than two orders of magnitude at 10V to be 1.27 x 10(-7) A/cm(2), corresponding to the record-low values reported to date. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3659477]

引用

页数：3

共 22 条

[1] THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET [J].

BARTON, TM ;

LADBROOKE, PH .

SOLID-STATE ELECTRONICS, 1986, 29 (08) :807-813

[2] Current status of AlInN layers lattice-matched to GaN for photonics and electronics [J].

Butte, R. ;

Carlin, J-F ;

Feltin, E. ;

Gonschorek, M. ;

Nicolay, S. ;

Christmann, G. ;

Simeonov, D. ;

Castiglia, A. ;

Dorsaz, J. ;

Buehlmann, H. J. ;

Christopoulos, S. ;

von Hoegersthal, G. Baldassarri Hoeger ;

Grundy, A. J. D. ;

Mosca, M. ;

Pinquier, C. ;

Py, M. A. ;

Demangeot, F. ;

Frandon, J. ;

Lagoudakis, P. G. ;

Baumberg, J. J. ;

Grandjean, N. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6328-6344

[3] Passivation of GaAs/AlGaAs heterojunction bipolar transistors by S2Cl2 solution [J].

Cao, XA ;

Hou, XY ;

Chen, XY ;

Li, ZS ;

Su, RZ ;

Ding, XM ;

Wang, X .

APPLIED PHYSICS LETTERS, 1997, 70 (06) :747-749

[4] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[5] Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN Schottky Contact [J].

Chen, Z. T. ;

Fujita, K. ;

Ichikawa, J. ;

Egawa, T. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) :620-622

[6] Improved performance of InAlN-based Schottky solar-blind photodiodes [J].

Chen, Z. T. ;

Tan, S. X. ;

Sakai, Y. ;

Egawa, T. .

APPLIED PHYSICS LETTERS, 2009, 94 (21)

[7] High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier [J].

Crespo, A. ;

Bellot, M. M. ;

Chabak, K. D. ;

Gillespie, J. K. ;

Jessen, G. H. ;

Miller, V. ;

Trejo, M. ;

Via, G. D. ;

Walker, D. E., Jr. ;

Winningham, B. W. ;

Smith, H. E. ;

Cooper, T. A. ;

Gao, X. ;

Guo, S. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (01) :2-4

[8] High-sheet-charge-carrier-density AlInN/GaN field-effect transistors on Si(111) [J].

Dadgar, A ;

Schulze, F ;

Bläsing, J ;

Diez, A ;

Krost, A ;

Neuburger, M ;

Kohn, E ;

Daumiller, I ;

Kunze, M .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5400-5402

[9] High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures [J].

Gonschorek, M. ;

Carlin, J-F. ;

Feltin, E. ;

Py, M. A. ;

Grandjean, N. .

APPLIED PHYSICS LETTERS, 2006, 89 (06)

[10] Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates [J].

Hsu, JWP ;

Manfra, MJ ;

Molnar, RJ ;

Heying, B ;

Speck, JS .

APPLIED PHYSICS LETTERS, 2002, 81 (01) :79-81

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