Self-assembled InAs quantum dots to investigate the tunneling between edge states in an AlGaAs/GaAs double quantum well system

被引：0

作者：

Kannan, E. S. ^{[1
,2
]}

Kim, Gil-Ho ^{[1
,2
]}

Farrer, I. ^{[3
]}

Ritchie, D. A. ^{[3
]}

机构：

[1] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, England

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 05期

关键词：

two-dimensional electron gas; tunneling; longitudinal and Hall magnetoresistance; quantum dots; quantum Hall effect;

D O I：

10.1016/j.physe.2007.09.037

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-assembled InAs quantum dots (QDs) embedded close to the tunnel barrier in the upper well of the double quantum well system act as a sensitive probe to investigate the tunneling between the edge states. In the monolayer configuration, when the tunnel interaction between the edge states was absent, the Hall resistance exhibited well-developed and quantized Hall plateaus at integer filling factors. However, in bilayer configuration, no Hall plateaus were seen and an abrupt increase in the resistance was observed at B = 2.1 T, whereas no such anomalies were found in the control sample. This behavior appears to have its origin from the interaction between the edge state electrons and QDs as they tunnel across the barrier due to the difference in chemical potential between the upper and lower well. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1442 / 1445

页数：4

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